Memory device and manufacturing method

A static random access memory device includes a first gate, a second gate, and a third gate. The first gate extends in a first direction from a standard threshold voltage region of a substrate to a low threshold voltage region, abutting the standard threshold voltage region, of the substrate. The se...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lo, Kuo-Hung, Kuo, Ying-Hsiu, Chang, Feng-Ming
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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