Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory stack structures vertically extending through the alternating stack, a perforated dielectric moat structure vertically extending through the altern...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Otsu, Yoshitaka, Kanazawa, Junpei, Terahara, Masanori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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