Memristor and neural network using same

Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide having elements of Ga, Sn, and oxygen, disposed between the first...

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Bibliographische Detailangaben
Hauptverfasser: Miyamae, Yoshinori, Kimura, Mutsumi, Sugisaki, Sumio
Format: Patent
Sprache:eng
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