Self-aligned embedded phase change memory cell having a fin shaped bottom electrode

An integrated circuit comprising a self-aligned embedded phase change memory cell is described. In an example, the integrated circuit includes a bottom electrode. A conductive line is above the bottom electrode along a first direction above a substrate. A memory element is coupled between the bottom...

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Bibliographische Detailangaben

1. Verfasser:	Kuo, Charles C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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