Switching atomic transistor and method for operating same

Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the interme...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Tae Yoon, Hong, Jin Pyo, Baek, Gwang Ho, Lee, Ah Rahm
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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