Switching atomic transistor and method for operating same
Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the interme...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kim, Tae Yoon Hong, Jin Pyo Baek, Gwang Ho Lee, Ah Rahm |
| description | Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11258009B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11258009B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11258009B23</originalsourceid><addsrcrecordid>eNrjZLAMLs8sSc7IzEtXSCzJz81MVigpSswrziwuyS9SSMxLUchNLcnIT1FIA3LzC1KLEktASosTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGphYGBpZORMTFqAGt_Lxg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Switching atomic transistor and method for operating same</title><source>esp@cenet</source><creator>Kim, Tae Yoon ; Hong, Jin Pyo ; Baek, Gwang Ho ; Lee, Ah Rahm</creator><creatorcontrib>Kim, Tae Yoon ; Hong, Jin Pyo ; Baek, Gwang Ho ; Lee, Ah Rahm</creatorcontrib><description>Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220222&DB=EPODOC&CC=US&NR=11258009B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220222&DB=EPODOC&CC=US&NR=11258009B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Tae Yoon</creatorcontrib><creatorcontrib>Hong, Jin Pyo</creatorcontrib><creatorcontrib>Baek, Gwang Ho</creatorcontrib><creatorcontrib>Lee, Ah Rahm</creatorcontrib><title>Switching atomic transistor and method for operating same</title><description>Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMLs8sSc7IzEtXSCzJz81MVigpSswrziwuyS9SSMxLUchNLcnIT1FIA3LzC1KLEktASosTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGphYGBpZORMTFqAGt_Lxg</recordid><startdate>20220222</startdate><enddate>20220222</enddate><creator>Kim, Tae Yoon</creator><creator>Hong, Jin Pyo</creator><creator>Baek, Gwang Ho</creator><creator>Lee, Ah Rahm</creator><scope>EVB</scope></search><sort><creationdate>20220222</creationdate><title>Switching atomic transistor and method for operating same</title><author>Kim, Tae Yoon ; Hong, Jin Pyo ; Baek, Gwang Ho ; Lee, Ah Rahm</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11258009B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae Yoon</creatorcontrib><creatorcontrib>Hong, Jin Pyo</creatorcontrib><creatorcontrib>Baek, Gwang Ho</creatorcontrib><creatorcontrib>Lee, Ah Rahm</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Tae Yoon</au><au>Hong, Jin Pyo</au><au>Baek, Gwang Ho</au><au>Lee, Ah Rahm</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Switching atomic transistor and method for operating same</title><date>2022-02-22</date><risdate>2022</risdate><abstract>Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US11258009B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Switching atomic transistor and method for operating same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T18%3A03%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Tae%20Yoon&rft.date=2022-02-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11258009B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |