Semiconductor manufacturing method and structure thereof

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive...

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Hauptverfasser:	Lin, Shiang-Chi, Lai, Fei-Lung, Cheng, Chun-Wen, Chu, Chia-Hua
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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creator	Lin, Shiang-Chi Lai, Fei-Lung Cheng, Chun-Wen Chu, Chia-Hua
description	A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
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The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; TESTING ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220222&DB=EPODOC&CC=US&NR=11254564B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220222&DB=EPODOC&CC=US&NR=11254564B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lin, Shiang-Chi</creatorcontrib><creatorcontrib>Lai, Fei-Lung</creatorcontrib><creatorcontrib>Cheng, Chun-Wen</creatorcontrib><creatorcontrib>Chu, Chia-Hua</creatorcontrib><title>Semiconductor manufacturing method and structure thereof</title><description>A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. 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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
title	Semiconductor manufacturing method and structure thereof
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