Buried word line of a dynamic random access memory and method for fabricating the same

A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the s...

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Bibliographische Detailangaben

Hauptverfasser:	Wu, Chia-Chen, Chen, Tzu-Chieh, Tsai, Chih-Chieh, Chang, Kai-Jiun, Chen, Yi-Wei, Huang, Yi-An, Cheng, Tsun-Min, Chen, Pin-Hong
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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