Buried word line of a dynamic random access memory and method for fabricating the same
A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the s...
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| creator | Wu, Chia-Chen Chen, Tzu-Chieh Tsai, Chih-Chieh Chang, Kai-Jiun Chen, Yi-Wei Huang, Yi-An Cheng, Tsun-Min Chen, Pin-Hong |
| description | A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench. |
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| title | Buried word line of a dynamic random access memory and method for fabricating the same |
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