Semiconductor device and method of forming the semiconductor device
A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
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creator | Karve, Gauri Lie, Fee Li Teehan, Sean Bergendahl, Marc Adam Robison, Robert Russell Sporre, John Ryan Miller, Eric R |
description | A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11239316B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11239316B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11239316B23</originalsourceid><addsrcrecordid>eNrjZHAOTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU0jLL8rNzEtXKMlIVSjGopyHgTUtMac4lRdKczMourmGOHvophbkx6cWFyQmp-allsSHBhsaGhlbGhuaORkZE6MGAJnbMsw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method of forming the semiconductor device</title><source>esp@cenet</source><creator>Karve, Gauri ; Lie, Fee Li ; Teehan, Sean ; Bergendahl, Marc Adam ; Robison, Robert Russell ; Sporre, John Ryan ; Miller, Eric R</creator><creatorcontrib>Karve, Gauri ; Lie, Fee Li ; Teehan, Sean ; Bergendahl, Marc Adam ; Robison, Robert Russell ; Sporre, John Ryan ; Miller, Eric R</creatorcontrib><description>A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11239316B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11239316B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Karve, Gauri</creatorcontrib><creatorcontrib>Lie, Fee Li</creatorcontrib><creatorcontrib>Teehan, Sean</creatorcontrib><creatorcontrib>Bergendahl, Marc Adam</creatorcontrib><creatorcontrib>Robison, Robert Russell</creatorcontrib><creatorcontrib>Sporre, John Ryan</creatorcontrib><creatorcontrib>Miller, Eric R</creatorcontrib><title>Semiconductor device and method of forming the semiconductor device</title><description>A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAOTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU0jLL8rNzEtXKMlIVSjGopyHgTUtMac4lRdKczMourmGOHvophbkx6cWFyQmp-allsSHBhsaGhlbGhuaORkZE6MGAJnbMsw</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Karve, Gauri</creator><creator>Lie, Fee Li</creator><creator>Teehan, Sean</creator><creator>Bergendahl, Marc Adam</creator><creator>Robison, Robert Russell</creator><creator>Sporre, John Ryan</creator><creator>Miller, Eric R</creator><scope>EVB</scope></search><sort><creationdate>20220201</creationdate><title>Semiconductor device and method of forming the semiconductor device</title><author>Karve, Gauri ; Lie, Fee Li ; Teehan, Sean ; Bergendahl, Marc Adam ; Robison, Robert Russell ; Sporre, John Ryan ; Miller, Eric R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11239316B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Karve, Gauri</creatorcontrib><creatorcontrib>Lie, Fee Li</creatorcontrib><creatorcontrib>Teehan, Sean</creatorcontrib><creatorcontrib>Bergendahl, Marc Adam</creatorcontrib><creatorcontrib>Robison, Robert Russell</creatorcontrib><creatorcontrib>Sporre, John Ryan</creatorcontrib><creatorcontrib>Miller, Eric R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Karve, Gauri</au><au>Lie, Fee Li</au><au>Teehan, Sean</au><au>Bergendahl, Marc Adam</au><au>Robison, Robert Russell</au><au>Sporre, John Ryan</au><au>Miller, Eric R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method of forming the semiconductor device</title><date>2022-02-01</date><risdate>2022</risdate><abstract>A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device and method of forming the semiconductor device |
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