Hybrid image sensors with improved charge injection efficiency
Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) couple...
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| creator | Agranov, Gennadiy A Cellek, Oray O Chen, QingFei Li, Xiangli |
| description | Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11239267B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11239267B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11239267B23</originalsourceid><addsrcrecordid>eNrjZLDzqEwqykxRyMxNTE9VKE7NK84vKlYozyzJAAoVFOWXpaYoJGckFgElM_OyUpNLMvPzFFLT0jKTM1Pzkit5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGxpZGZuZORMTFqAH4wMQ0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Hybrid image sensors with improved charge injection efficiency</title><source>esp@cenet</source><creator>Agranov, Gennadiy A ; Cellek, Oray O ; Chen, QingFei ; Li, Xiangli</creator><creatorcontrib>Agranov, Gennadiy A ; Cellek, Oray O ; Chen, QingFei ; Li, Xiangli</creatorcontrib><description>Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11239267B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11239267B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Agranov, Gennadiy A</creatorcontrib><creatorcontrib>Cellek, Oray O</creatorcontrib><creatorcontrib>Chen, QingFei</creatorcontrib><creatorcontrib>Li, Xiangli</creatorcontrib><title>Hybrid image sensors with improved charge injection efficiency</title><description>Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzqEwqykxRyMxNTE9VKE7NK84vKlYozyzJAAoVFOWXpaYoJGckFgElM_OyUpNLMvPzFFLT0jKTM1Pzkit5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGxpZGZuZORMTFqAH4wMQ0</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Agranov, Gennadiy A</creator><creator>Cellek, Oray O</creator><creator>Chen, QingFei</creator><creator>Li, Xiangli</creator><scope>EVB</scope></search><sort><creationdate>20220201</creationdate><title>Hybrid image sensors with improved charge injection efficiency</title><author>Agranov, Gennadiy A ; Cellek, Oray O ; Chen, QingFei ; Li, Xiangli</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11239267B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Agranov, Gennadiy A</creatorcontrib><creatorcontrib>Cellek, Oray O</creatorcontrib><creatorcontrib>Chen, QingFei</creatorcontrib><creatorcontrib>Li, Xiangli</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Agranov, Gennadiy A</au><au>Cellek, Oray O</au><au>Chen, QingFei</au><au>Li, Xiangli</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hybrid image sensors with improved charge injection efficiency</title><date>2022-02-01</date><risdate>2022</risdate><abstract>Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | Hybrid image sensors with improved charge injection efficiency |
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