Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing
Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch...
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| creator | Manna, Pramit Mallick, Abhijit Basu Cheng, Rui |
| description | Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11236418B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11236418B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11236418B23</originalsourceid><addsrcrecordid>eNqNizEKwkAQANNYiPqH9QFXJBGxjij2ah2OyyZZSHbP2w36fA2ItdXAMLPMukrMZHRThC7J03qQFpQGCsIgL2oQPDc_w2RpdpMSd6D4mJCN_AANRlEyEnZooXeW0BvEJAF1btfZovWD4ubLVbY9n27Hi_t8NWr0ARmtvl_zvCj3u_xQFeU_zRsT-UDk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing</title><source>esp@cenet</source><creator>Manna, Pramit ; Mallick, Abhijit Basu ; Cheng, Rui</creator><creatorcontrib>Manna, Pramit ; Mallick, Abhijit Basu ; Cheng, Rui</creatorcontrib><description>Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11236418B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220201&DB=EPODOC&CC=US&NR=11236418B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Manna, Pramit</creatorcontrib><creatorcontrib>Mallick, Abhijit Basu</creatorcontrib><creatorcontrib>Cheng, Rui</creatorcontrib><title>Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing</title><description>Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKwkAQANNYiPqH9QFXJBGxjij2ah2OyyZZSHbP2w36fA2ItdXAMLPMukrMZHRThC7J03qQFpQGCsIgL2oQPDc_w2RpdpMSd6D4mJCN_AANRlEyEnZooXeW0BvEJAF1btfZovWD4ubLVbY9n27Hi_t8NWr0ARmtvl_zvCj3u_xQFeU_zRsT-UDk</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Manna, Pramit</creator><creator>Mallick, Abhijit Basu</creator><creator>Cheng, Rui</creator><scope>EVB</scope></search><sort><creationdate>20220201</creationdate><title>Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing</title><author>Manna, Pramit ; Mallick, Abhijit Basu ; Cheng, Rui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11236418B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Manna, Pramit</creatorcontrib><creatorcontrib>Mallick, Abhijit Basu</creatorcontrib><creatorcontrib>Cheng, Rui</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Manna, Pramit</au><au>Mallick, Abhijit Basu</au><au>Cheng, Rui</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing</title><date>2022-02-01</date><risdate>2022</risdate><abstract>Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing |
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