Fabrication method of metal-free SOI wafer

Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Cheng-Ta, Yeh, Yu-Lung, Chen, Yen-Hsiu, Lu, Victor Y, Cheng, Yu-Hung, Tu, Yeur-Luen, Lin, Shi-Chieh, Lee, Ru-Liang, Chen, Pu-Fang, Chiang, Po-Jung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!