Self-aligned implants for silicon carbide (SiC) technologies and fabrication method
A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial laye...
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| creator | Odekirk, Bruce Gendron-Hansen, Amaury |
| description | A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11222782B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11222782B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11222782B23</originalsourceid><addsrcrecordid>eNqNyqEOwjAQANAZBAH-4XAgJlYE0ywQfEEvt_a6XXLrNW3_PyD4ANQzb9tYSxJaFJ4jeeA1CcZaIGiGwsJOIzjME3uCk-XhDJXcElV0ZiqA0UPAKbPDyt-6Ul3U75tNQCl0-Llrjo_7a3i2lHSkktBRpDq-bdcZY669uZnLP-cDDLY3_w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Self-aligned implants for silicon carbide (SiC) technologies and fabrication method</title><source>esp@cenet</source><creator>Odekirk, Bruce ; Gendron-Hansen, Amaury</creator><creatorcontrib>Odekirk, Bruce ; Gendron-Hansen, Amaury</creatorcontrib><description>A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220111&DB=EPODOC&CC=US&NR=11222782B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220111&DB=EPODOC&CC=US&NR=11222782B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Odekirk, Bruce</creatorcontrib><creatorcontrib>Gendron-Hansen, Amaury</creatorcontrib><title>Self-aligned implants for silicon carbide (SiC) technologies and fabrication method</title><description>A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyqEOwjAQANAZBAH-4XAgJlYE0ywQfEEvt_a6XXLrNW3_PyD4ANQzb9tYSxJaFJ4jeeA1CcZaIGiGwsJOIzjME3uCk-XhDJXcElV0ZiqA0UPAKbPDyt-6Ul3U75tNQCl0-Llrjo_7a3i2lHSkktBRpDq-bdcZY669uZnLP-cDDLY3_w</recordid><startdate>20220111</startdate><enddate>20220111</enddate><creator>Odekirk, Bruce</creator><creator>Gendron-Hansen, Amaury</creator><scope>EVB</scope></search><sort><creationdate>20220111</creationdate><title>Self-aligned implants for silicon carbide (SiC) technologies and fabrication method</title><author>Odekirk, Bruce ; Gendron-Hansen, Amaury</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11222782B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Odekirk, Bruce</creatorcontrib><creatorcontrib>Gendron-Hansen, Amaury</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Odekirk, Bruce</au><au>Gendron-Hansen, Amaury</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Self-aligned implants for silicon carbide (SiC) technologies and fabrication method</title><date>2022-01-11</date><risdate>2022</risdate><abstract>A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Self-aligned implants for silicon carbide (SiC) technologies and fabrication method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T14%3A14%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Odekirk,%20Bruce&rft.date=2022-01-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11222782B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |