Semiconductor device package

A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Huang, Hung-Hsien, Chen, Hsin-En, Tarng, Shin-Luh
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Huang, Hung-Hsien
Chen, Hsin-En
Tarng, Shin-Luh
description A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11205606B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11205606B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11205606B23</originalsourceid><addsrcrecordid>eNrjZJAJTs3NTM7PSylNLskvUkhJLctMTlUoSEzOTkxP5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVAVal5qSXxocGGhkYGpmYGZk5GxsSoAQCzXSP8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device package</title><source>esp@cenet</source><creator>Huang, Hung-Hsien ; Chen, Hsin-En ; Tarng, Shin-Luh</creator><creatorcontrib>Huang, Hung-Hsien ; Chen, Hsin-En ; Tarng, Shin-Luh</creatorcontrib><description>A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211221&amp;DB=EPODOC&amp;CC=US&amp;NR=11205606B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211221&amp;DB=EPODOC&amp;CC=US&amp;NR=11205606B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, Hung-Hsien</creatorcontrib><creatorcontrib>Chen, Hsin-En</creatorcontrib><creatorcontrib>Tarng, Shin-Luh</creatorcontrib><title>Semiconductor device package</title><description>A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJTs3NTM7PSylNLskvUkhJLctMTlUoSEzOTkxP5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVAVal5qSXxocGGhkYGpmYGZk5GxsSoAQCzXSP8</recordid><startdate>20211221</startdate><enddate>20211221</enddate><creator>Huang, Hung-Hsien</creator><creator>Chen, Hsin-En</creator><creator>Tarng, Shin-Luh</creator><scope>EVB</scope></search><sort><creationdate>20211221</creationdate><title>Semiconductor device package</title><author>Huang, Hung-Hsien ; Chen, Hsin-En ; Tarng, Shin-Luh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11205606B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Huang, Hung-Hsien</creatorcontrib><creatorcontrib>Chen, Hsin-En</creatorcontrib><creatorcontrib>Tarng, Shin-Luh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Hung-Hsien</au><au>Chen, Hsin-En</au><au>Tarng, Shin-Luh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device package</title><date>2021-12-21</date><risdate>2021</risdate><abstract>A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11205606B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device package
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T21%3A25%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Huang,%20Hung-Hsien&rft.date=2021-12-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11205606B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true