Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof
To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) belo...
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| creator | Blasco, Nicolas Sanchez, Antonio Arteaga Muller, Rocio Alejandra Girard, Jean-Marc Ko, Changhee Rochat, Raphael |
| description | To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below R1R2R3Ge-Co(CO)4 (1) (where R1, R2 and R3 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)4R4R5Ge-Co(CO)4 (2) (where R4 and R5 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group). |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11205573B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11205573B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11205573B23</originalsourceid><addsrcrecordid>eNrjZIh1T9VNzs8rSczMy8xLV3DO103LzMlVSMsvygXxcxNLUosyE3N0FNDVKYDVJealKKBqSC3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGRgampubGTkbGxKgBAGkzO1c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof</title><source>esp@cenet</source><creator>Blasco, Nicolas ; Sanchez, Antonio ; Arteaga Muller, Rocio Alejandra ; Girard, Jean-Marc ; Ko, Changhee ; Rochat, Raphael</creator><creatorcontrib>Blasco, Nicolas ; Sanchez, Antonio ; Arteaga Muller, Rocio Alejandra ; Girard, Jean-Marc ; Ko, Changhee ; Rochat, Raphael</creatorcontrib><description>To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below R1R2R3Ge-Co(CO)4 (1) (where R1, R2 and R3 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)4R4R5Ge-Co(CO)4 (2) (where R4 and R5 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211221&DB=EPODOC&CC=US&NR=11205573B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211221&DB=EPODOC&CC=US&NR=11205573B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Blasco, Nicolas</creatorcontrib><creatorcontrib>Sanchez, Antonio</creatorcontrib><creatorcontrib>Arteaga Muller, Rocio Alejandra</creatorcontrib><creatorcontrib>Girard, Jean-Marc</creatorcontrib><creatorcontrib>Ko, Changhee</creatorcontrib><creatorcontrib>Rochat, Raphael</creatorcontrib><title>Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof</title><description>To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below R1R2R3Ge-Co(CO)4 (1) (where R1, R2 and R3 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)4R4R5Ge-Co(CO)4 (2) (where R4 and R5 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh1T9VNzs8rSczMy8xLV3DO103LzMlVSMsvygXxcxNLUosyE3N0FNDVKYDVJealKKBqSC3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGRgampubGTkbGxKgBAGkzO1c</recordid><startdate>20211221</startdate><enddate>20211221</enddate><creator>Blasco, Nicolas</creator><creator>Sanchez, Antonio</creator><creator>Arteaga Muller, Rocio Alejandra</creator><creator>Girard, Jean-Marc</creator><creator>Ko, Changhee</creator><creator>Rochat, Raphael</creator><scope>EVB</scope></search><sort><creationdate>20211221</creationdate><title>Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof</title><author>Blasco, Nicolas ; Sanchez, Antonio ; Arteaga Muller, Rocio Alejandra ; Girard, Jean-Marc ; Ko, Changhee ; Rochat, Raphael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11205573B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Blasco, Nicolas</creatorcontrib><creatorcontrib>Sanchez, Antonio</creatorcontrib><creatorcontrib>Arteaga Muller, Rocio Alejandra</creatorcontrib><creatorcontrib>Girard, Jean-Marc</creatorcontrib><creatorcontrib>Ko, Changhee</creatorcontrib><creatorcontrib>Rochat, Raphael</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Blasco, Nicolas</au><au>Sanchez, Antonio</au><au>Arteaga Muller, Rocio Alejandra</au><au>Girard, Jean-Marc</au><au>Ko, Changhee</au><au>Rochat, Raphael</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof</title><date>2021-12-21</date><risdate>2021</risdate><abstract>To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below R1R2R3Ge-Co(CO)4 (1) (where R1, R2 and R3 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)4R4R5Ge-Co(CO)4 (2) (where R4 and R5 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof |
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