Epitaxial structure of Ga-face group III nitride, active device, and gate protection device thereof

The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buff...

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Bibliographische Detailangaben

1. Verfasser:	Huang, Chih-Shu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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