Three-dimensional flash memory device including channel structures having enlarged portions

A three-dimensional flash memory device including a lower and upper word line stack; a cell channel structure; and a dummy channel structure, wherein the cell channel structure includes a lower cell channel structure; an upper cell channel structure; and a cell channel enlarged portion between the l...

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Bibliographische Detailangaben

1. Verfasser:	Cheon, Jisung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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