Three-dimensional flash memory device including channel structures having enlarged portions

Three-dimensional flash memory device including channel structures having enlarged portions

A three-dimensional flash memory device including a lower and upper word line stack; a cell channel structure; and a dummy channel structure, wherein the cell channel structure includes a lower cell channel structure; an upper cell channel structure; and a cell channel enlarged portion between the l...

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1. Verfasser: Cheon, Jisung
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Cheon, Jisung
description A three-dimensional flash memory device including a lower and upper word line stack; a cell channel structure; and a dummy channel structure, wherein the cell channel structure includes a lower cell channel structure; an upper cell channel structure; and a cell channel enlarged portion between the lower and upper cell channel structures and having a width greater than that of the lower cell channel structure, wherein the dummy channel structure includes a lower dummy channel structure; an upper dummy channel structure; and a dummy channel enlarged portion between the lower and upper dummy channel structures, the dummy channel enlarged portion having a width greater than that of the lower dummy channel structure, wherein a difference between the width of the dummy channel enlarged portion and the lower dummy channel structure is greater than a difference between the width of the cell channel enlarged portion and the lower cell channel structure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Three-dimensional flash memory device including channel structures having enlarged portions
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