Method and apparatus for on-chip stress detection
A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locati...
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| creator | Piccardi, Michele Marr, Kenneth William Tiburzi, Marco-Domenico Tomayer, Joshua Daniel Cerafogli, Chiara Freeman, Eric Higgins |
| description | A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11189536B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11189536B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11189536B23</originalsourceid><addsrcrecordid>eNrjZDD0TS3JyE9RSMwD4oKCxKLEktJihbT8IoX8PN3kjMwCheKSotTiYoWU1JLU5JLM_DweBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhIfGmxoaGhhaWps5mRkTIwaAIroK80</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for on-chip stress detection</title><source>esp@cenet</source><creator>Piccardi, Michele ; Marr, Kenneth William ; Tiburzi, Marco-Domenico ; Tomayer, Joshua Daniel ; Cerafogli, Chiara ; Freeman, Eric Higgins</creator><creatorcontrib>Piccardi, Michele ; Marr, Kenneth William ; Tiburzi, Marco-Domenico ; Tomayer, Joshua Daniel ; Cerafogli, Chiara ; Freeman, Eric Higgins</creatorcontrib><description>A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211130&DB=EPODOC&CC=US&NR=11189536B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211130&DB=EPODOC&CC=US&NR=11189536B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Piccardi, Michele</creatorcontrib><creatorcontrib>Marr, Kenneth William</creatorcontrib><creatorcontrib>Tiburzi, Marco-Domenico</creatorcontrib><creatorcontrib>Tomayer, Joshua Daniel</creatorcontrib><creatorcontrib>Cerafogli, Chiara</creatorcontrib><creatorcontrib>Freeman, Eric Higgins</creatorcontrib><title>Method and apparatus for on-chip stress detection</title><description>A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0TS3JyE9RSMwD4oKCxKLEktJihbT8IoX8PN3kjMwCheKSotTiYoWU1JLU5JLM_DweBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhIfGmxoaGhhaWps5mRkTIwaAIroK80</recordid><startdate>20211130</startdate><enddate>20211130</enddate><creator>Piccardi, Michele</creator><creator>Marr, Kenneth William</creator><creator>Tiburzi, Marco-Domenico</creator><creator>Tomayer, Joshua Daniel</creator><creator>Cerafogli, Chiara</creator><creator>Freeman, Eric Higgins</creator><scope>EVB</scope></search><sort><creationdate>20211130</creationdate><title>Method and apparatus for on-chip stress detection</title><author>Piccardi, Michele ; Marr, Kenneth William ; Tiburzi, Marco-Domenico ; Tomayer, Joshua Daniel ; Cerafogli, Chiara ; Freeman, Eric Higgins</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11189536B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Piccardi, Michele</creatorcontrib><creatorcontrib>Marr, Kenneth William</creatorcontrib><creatorcontrib>Tiburzi, Marco-Domenico</creatorcontrib><creatorcontrib>Tomayer, Joshua Daniel</creatorcontrib><creatorcontrib>Cerafogli, Chiara</creatorcontrib><creatorcontrib>Freeman, Eric Higgins</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Piccardi, Michele</au><au>Marr, Kenneth William</au><au>Tiburzi, Marco-Domenico</au><au>Tomayer, Joshua Daniel</au><au>Cerafogli, Chiara</au><au>Freeman, Eric Higgins</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for on-chip stress detection</title><date>2021-11-30</date><risdate>2021</risdate><abstract>A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Method and apparatus for on-chip stress detection |
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