Ultra-low supply-voltage static random-access memory (SRAM) with 8-transistor cell with P and N pass gates to same bit lines

An eight-transistor (8T) Static Random-Access Memory (SRAM) cell has four latch transistors, and pairs of n-channel and p-channel pass transistors in parallel to only one pair of bit lines. During read, only the read word line and the n-channel pass transistors are activated, but during a write both...

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Bibliographische Detailangaben

Hauptverfasser:	Doluca, Sinan, Riordan, Thomas J
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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