Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, inc...

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Hauptverfasser: Funaki, Katsunori, Igawa, Hiroto, Takeshima, Yuichiro, Nakayama, Masanori
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Funaki, Katsunori
Igawa, Hiroto
Takeshima, Yuichiro
Nakayama, Masanori
description Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
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