Fluorocarbon molecules for high aspect ratio oxide etch

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hex...

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Bibliographische Detailangaben

Hauptverfasser:	Anderson, Curtis, Gupta, Rahul, Omarjee, Vincent M, Stafford, Nathan, Dussarrat, Christian
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES
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