Component for semiconductor production device, and production method of component for semiconductor production device
A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and t...
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| creator | Mitsuya, Kohei Ogawa, Takamichi Tange, Hideo Hotta, Motoki |
| description | A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11142484B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11142484B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11142484B23</originalsourceid><addsrcrecordid>eNrjZCh1zs8tyM9LzStRSMsvUihOzc1Mzs9LKU0uAfIKivJBrMz8PIWU1LLM5FQdhcS8FGTh3NSSjPwUhfw0hWRSzOFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGhiZGJhYmTkbGxKgBAJAoRp4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Component for semiconductor production device, and production method of component for semiconductor production device</title><source>esp@cenet</source><creator>Mitsuya, Kohei ; Ogawa, Takamichi ; Tange, Hideo ; Hotta, Motoki</creator><creatorcontrib>Mitsuya, Kohei ; Ogawa, Takamichi ; Tange, Hideo ; Hotta, Motoki</creatorcontrib><description>A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.</description><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211012&DB=EPODOC&CC=US&NR=11142484B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211012&DB=EPODOC&CC=US&NR=11142484B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mitsuya, Kohei</creatorcontrib><creatorcontrib>Ogawa, Takamichi</creatorcontrib><creatorcontrib>Tange, Hideo</creatorcontrib><creatorcontrib>Hotta, Motoki</creatorcontrib><title>Component for semiconductor production device, and production method of component for semiconductor production device</title><description>A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCh1zs8tyM9LzStRSMsvUihOzc1Mzs9LKU0uAfIKivJBrMz8PIWU1LLM5FQdhcS8FGTh3NSSjPwUhfw0hWRSzOFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGhiZGJhYmTkbGxKgBAJAoRp4</recordid><startdate>20211012</startdate><enddate>20211012</enddate><creator>Mitsuya, Kohei</creator><creator>Ogawa, Takamichi</creator><creator>Tange, Hideo</creator><creator>Hotta, Motoki</creator><scope>EVB</scope></search><sort><creationdate>20211012</creationdate><title>Component for semiconductor production device, and production method of component for semiconductor production device</title><author>Mitsuya, Kohei ; Ogawa, Takamichi ; Tange, Hideo ; Hotta, Motoki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11142484B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>Mitsuya, Kohei</creatorcontrib><creatorcontrib>Ogawa, Takamichi</creatorcontrib><creatorcontrib>Tange, Hideo</creatorcontrib><creatorcontrib>Hotta, Motoki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mitsuya, Kohei</au><au>Ogawa, Takamichi</au><au>Tange, Hideo</au><au>Hotta, Motoki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Component for semiconductor production device, and production method of component for semiconductor production device</title><date>2021-10-12</date><risdate>2021</risdate><abstract>A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE |
| title | Component for semiconductor production device, and production method of component for semiconductor production device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T08%3A30%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Mitsuya,%20Kohei&rft.date=2021-10-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11142484B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |