Substrate processing method, recording medium and substrate processing system
In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid fi...
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| creator | Masuzumi, Takuro Kiyose, Hiromi Goshi, Gentaro Tsukano, Kento Fukui, Shogo |
| description | In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11133176B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11133176B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11133176B23</originalsourceid><addsrcrecordid>eNrjZPANLk0qLilKLElVKCjKT04tLs7MS1fITS3JyE_RUShKTc4vSoGIpGSW5iok5qUoFGPTUVxZXJKay8PAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4kODDQ0NjY0Nzc2cjIyJUQMASS43LQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate processing method, recording medium and substrate processing system</title><source>esp@cenet</source><creator>Masuzumi, Takuro ; Kiyose, Hiromi ; Goshi, Gentaro ; Tsukano, Kento ; Fukui, Shogo</creator><creatorcontrib>Masuzumi, Takuro ; Kiyose, Hiromi ; Goshi, Gentaro ; Tsukano, Kento ; Fukui, Shogo</creatorcontrib><description>In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLEANING ; CLEANING IN GENERAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210928&DB=EPODOC&CC=US&NR=11133176B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210928&DB=EPODOC&CC=US&NR=11133176B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Masuzumi, Takuro</creatorcontrib><creatorcontrib>Kiyose, Hiromi</creatorcontrib><creatorcontrib>Goshi, Gentaro</creatorcontrib><creatorcontrib>Tsukano, Kento</creatorcontrib><creatorcontrib>Fukui, Shogo</creatorcontrib><title>Substrate processing method, recording medium and substrate processing system</title><description>In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPANLk0qLilKLElVKCjKT04tLs7MS1fITS3JyE_RUShKTc4vSoGIpGSW5iok5qUoFGPTUVxZXJKay8PAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4kODDQ0NjY0Nzc2cjIyJUQMASS43LQ</recordid><startdate>20210928</startdate><enddate>20210928</enddate><creator>Masuzumi, Takuro</creator><creator>Kiyose, Hiromi</creator><creator>Goshi, Gentaro</creator><creator>Tsukano, Kento</creator><creator>Fukui, Shogo</creator><scope>EVB</scope></search><sort><creationdate>20210928</creationdate><title>Substrate processing method, recording medium and substrate processing system</title><author>Masuzumi, Takuro ; Kiyose, Hiromi ; Goshi, Gentaro ; Tsukano, Kento ; Fukui, Shogo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11133176B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Masuzumi, Takuro</creatorcontrib><creatorcontrib>Kiyose, Hiromi</creatorcontrib><creatorcontrib>Goshi, Gentaro</creatorcontrib><creatorcontrib>Tsukano, Kento</creatorcontrib><creatorcontrib>Fukui, Shogo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Masuzumi, Takuro</au><au>Kiyose, Hiromi</au><au>Goshi, Gentaro</au><au>Tsukano, Kento</au><au>Fukui, Shogo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing method, recording medium and substrate processing system</title><date>2021-09-28</date><risdate>2021</risdate><abstract>In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Substrate processing method, recording medium and substrate processing system |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T00%3A13%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Masuzumi,%20Takuro&rft.date=2021-09-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11133176B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |