Field plate structure to enhance transistor breakdown voltage

Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate electrode overlies a substrate between a source region and a drain region. A drift region is arranged laterally between the gate electrode and the drain region. A plurality of inter-...

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Bibliographische Detailangaben

Hauptverfasser:	Ho, Chia-Cheng, Jong, Yu-Chang, Lei, Ming-Ta
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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