Metal line structure and method

Metal line structure and method

A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second cond...

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Hauptverfasser: Kao, Hsiang-Lun, Chen, Jian-Hua, Yang, Tai-I, Liao, Yu-Chieh, Liu, Hsiang-Wei, Wang, Yung-Chih, Lin, Tien-Lu
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kao, Hsiang-Lun
Chen, Jian-Hua
Yang, Tai-I
Liao, Yu-Chieh
Liu, Hsiang-Wei
Wang, Yung-Chih
Lin, Tien-Lu
description A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Metal line structure and method
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