Method and apparatus to determine a patterning process parameter

A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminati...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: McNamara, Elliott Gerard, Tsiatmas, Anagnostis, Theeuwes, Thomas, Hinnen, Paul Christiaan, Van Leest, Adriaan Johan, Cramer, Hugo Augustinus Joseph, Verma, Alok
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator McNamara, Elliott Gerard
Tsiatmas, Anagnostis
Theeuwes, Thomas
Hinnen, Paul Christiaan
Van Leest, Adriaan Johan
Cramer, Hugo Augustinus Joseph
Verma, Alok
description A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11101184B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11101184B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11101184B23</originalsourceid><addsrcrecordid>eNrjZHDwTS3JyE9RSMwD4oKCxKLEktJihZJ8hZTUktSi3My8VIVEhYLEEiAnLzMvXaGgKD85tbhYAaQyF6SEh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEhwYbGhoaGBpamDgZGROjBgDgHTGf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus to determine a patterning process parameter</title><source>esp@cenet</source><creator>McNamara, Elliott Gerard ; Tsiatmas, Anagnostis ; Theeuwes, Thomas ; Hinnen, Paul Christiaan ; Van Leest, Adriaan Johan ; Cramer, Hugo Augustinus Joseph ; Verma, Alok</creator><creatorcontrib>McNamara, Elliott Gerard ; Tsiatmas, Anagnostis ; Theeuwes, Thomas ; Hinnen, Paul Christiaan ; Van Leest, Adriaan Johan ; Cramer, Hugo Augustinus Joseph ; Verma, Alok</creatorcontrib><description>A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=US&amp;NR=11101184B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=US&amp;NR=11101184B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>McNamara, Elliott Gerard</creatorcontrib><creatorcontrib>Tsiatmas, Anagnostis</creatorcontrib><creatorcontrib>Theeuwes, Thomas</creatorcontrib><creatorcontrib>Hinnen, Paul Christiaan</creatorcontrib><creatorcontrib>Van Leest, Adriaan Johan</creatorcontrib><creatorcontrib>Cramer, Hugo Augustinus Joseph</creatorcontrib><creatorcontrib>Verma, Alok</creatorcontrib><title>Method and apparatus to determine a patterning process parameter</title><description>A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDwTS3JyE9RSMwD4oKCxKLEktJihZJ8hZTUktSi3My8VIVEhYLEEiAnLzMvXaGgKD85tbhYAaQyF6SEh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEhwYbGhoaGBpamDgZGROjBgDgHTGf</recordid><startdate>20210824</startdate><enddate>20210824</enddate><creator>McNamara, Elliott Gerard</creator><creator>Tsiatmas, Anagnostis</creator><creator>Theeuwes, Thomas</creator><creator>Hinnen, Paul Christiaan</creator><creator>Van Leest, Adriaan Johan</creator><creator>Cramer, Hugo Augustinus Joseph</creator><creator>Verma, Alok</creator><scope>EVB</scope></search><sort><creationdate>20210824</creationdate><title>Method and apparatus to determine a patterning process parameter</title><author>McNamara, Elliott Gerard ; Tsiatmas, Anagnostis ; Theeuwes, Thomas ; Hinnen, Paul Christiaan ; Van Leest, Adriaan Johan ; Cramer, Hugo Augustinus Joseph ; Verma, Alok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11101184B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>McNamara, Elliott Gerard</creatorcontrib><creatorcontrib>Tsiatmas, Anagnostis</creatorcontrib><creatorcontrib>Theeuwes, Thomas</creatorcontrib><creatorcontrib>Hinnen, Paul Christiaan</creatorcontrib><creatorcontrib>Van Leest, Adriaan Johan</creatorcontrib><creatorcontrib>Cramer, Hugo Augustinus Joseph</creatorcontrib><creatorcontrib>Verma, Alok</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>McNamara, Elliott Gerard</au><au>Tsiatmas, Anagnostis</au><au>Theeuwes, Thomas</au><au>Hinnen, Paul Christiaan</au><au>Van Leest, Adriaan Johan</au><au>Cramer, Hugo Augustinus Joseph</au><au>Verma, Alok</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus to determine a patterning process parameter</title><date>2021-08-24</date><risdate>2021</risdate><abstract>A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11101184B2
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Method and apparatus to determine a patterning process parameter
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T06%3A46%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=McNamara,%20Elliott%20Gerard&rft.date=2021-08-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11101184B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true