Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interpo...

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Hauptverfasser: Kang, Sung Geun, Sung, Pil Je, Ahn, Seo Yeon, Lee, Wang Gu, Lee, Eun Young, Seo, Seong Min, Song, Yong, Paek, Jong Sik, Park, Doo Hyun
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creator Kang, Sung Geun
Sung, Pil Je
Ahn, Seo Yeon
Lee, Wang Gu
Lee, Eun Young
Seo, Seong Min
Song, Yong
Paek, Jong Sik
Park, Doo Hyun
description A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11101144B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11101144B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11101144B23</originalsourceid><addsrcrecordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGhgaGhiYmTkbGxKgBAKAQLa4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and manufacturing method thereof</title><source>esp@cenet</source><creator>Kang, Sung Geun ; Sung, Pil Je ; Ahn, Seo Yeon ; Lee, Wang Gu ; Lee, Eun Young ; Seo, Seong Min ; Song, Yong ; Paek, Jong Sik ; Park, Doo Hyun</creator><creatorcontrib>Kang, Sung Geun ; Sung, Pil Je ; Ahn, Seo Yeon ; Lee, Wang Gu ; Lee, Eun Young ; Seo, Seong Min ; Song, Yong ; Paek, Jong Sik ; Park, Doo Hyun</creatorcontrib><description>A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=US&amp;NR=11101144B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=US&amp;NR=11101144B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kang, Sung Geun</creatorcontrib><creatorcontrib>Sung, Pil Je</creatorcontrib><creatorcontrib>Ahn, Seo Yeon</creatorcontrib><creatorcontrib>Lee, Wang Gu</creatorcontrib><creatorcontrib>Lee, Eun Young</creatorcontrib><creatorcontrib>Seo, Seong Min</creatorcontrib><creatorcontrib>Song, Yong</creatorcontrib><creatorcontrib>Paek, Jong Sik</creatorcontrib><creatorcontrib>Park, Doo Hyun</creatorcontrib><title>Semiconductor device and manufacturing method thereof</title><description>A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGhgaGhiYmTkbGxKgBAKAQLa4</recordid><startdate>20210824</startdate><enddate>20210824</enddate><creator>Kang, Sung Geun</creator><creator>Sung, Pil Je</creator><creator>Ahn, Seo Yeon</creator><creator>Lee, Wang Gu</creator><creator>Lee, Eun Young</creator><creator>Seo, Seong Min</creator><creator>Song, Yong</creator><creator>Paek, Jong Sik</creator><creator>Park, Doo Hyun</creator><scope>EVB</scope></search><sort><creationdate>20210824</creationdate><title>Semiconductor device and manufacturing method thereof</title><author>Kang, Sung Geun ; Sung, Pil Je ; Ahn, Seo Yeon ; Lee, Wang Gu ; Lee, Eun Young ; Seo, Seong Min ; Song, Yong ; Paek, Jong Sik ; Park, Doo Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11101144B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kang, Sung Geun</creatorcontrib><creatorcontrib>Sung, Pil Je</creatorcontrib><creatorcontrib>Ahn, Seo Yeon</creatorcontrib><creatorcontrib>Lee, Wang Gu</creatorcontrib><creatorcontrib>Lee, Eun Young</creatorcontrib><creatorcontrib>Seo, Seong Min</creatorcontrib><creatorcontrib>Song, Yong</creatorcontrib><creatorcontrib>Paek, Jong Sik</creatorcontrib><creatorcontrib>Park, Doo Hyun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kang, Sung Geun</au><au>Sung, Pil Je</au><au>Ahn, Seo Yeon</au><au>Lee, Wang Gu</au><au>Lee, Eun Young</au><au>Seo, Seong Min</au><au>Song, Yong</au><au>Paek, Jong Sik</au><au>Park, Doo Hyun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and manufacturing method thereof</title><date>2021-08-24</date><risdate>2021</risdate><abstract>A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.</abstract><oa>free_for_read</oa></addata></record>
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source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T16%3A44%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kang,%20Sung%20Geun&rft.date=2021-08-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11101144B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true