Transistor and method of forming same

The disclosure provides for a transistor which may include: a gate stack on a substrate, the gate stack including a gate dielectric and a gate electrode over the gate dielectric; a channel within the substrate and under the gate stack; a doped source and a doped drain on opposing sides of the channe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mochizuki, Shogo, Basker, Veeraraghavan S, Reznicek, Alexander, Gluschenkov, Oleg, Breil, Nicolas L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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