Integrated antenna using through silicon vias

Integrated antenna using through silicon vias

Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least...

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1. Verfasser: Fay, Owen R
Format: Patent
Sprache:eng
Schlagworte:
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Fay, Owen R
description Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least a portion of the plurality of TSVs, and at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion. The plurality of TSVs with metallic conductors located within are configured to form an antenna structure. Selectively breakable connective circuitry is used to form and/or tune the antenna structure.
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subjects ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Integrated antenna using through silicon vias
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