Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop...

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Hauptverfasser:	Dong, Lin, Yang, Yixiong, Hung, Steven, Bernal Ramos, Karla, Wang, Rongjun, Wu, Liqi, Lin, Yongjing, Yoshida, Naomi, Chen, Shih Chung, Tang, Wei, Yu, Sang-Ho
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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