Semiconductor device

A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Na, Hyungjoo, Hwang, Euichul, Lee, Sungmoon, Kim, Juyoun, Jung, Jooho, Yoo, Sangmin, Suh, Bongseok
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Na, Hyungjoo
Hwang, Euichul
Lee, Sungmoon
Kim, Juyoun
Jung, Jooho
Yoo, Sangmin
Suh, Bongseok
description A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11062961B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11062961B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11062961B23</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGBmZGlmaGTkbGxKgBAGLVIRI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>Na, Hyungjoo ; Hwang, Euichul ; Lee, Sungmoon ; Kim, Juyoun ; Jung, Jooho ; Yoo, Sangmin ; Suh, Bongseok</creator><creatorcontrib>Na, Hyungjoo ; Hwang, Euichul ; Lee, Sungmoon ; Kim, Juyoun ; Jung, Jooho ; Yoo, Sangmin ; Suh, Bongseok</creatorcontrib><description>A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210713&amp;DB=EPODOC&amp;CC=US&amp;NR=11062961B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210713&amp;DB=EPODOC&amp;CC=US&amp;NR=11062961B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Na, Hyungjoo</creatorcontrib><creatorcontrib>Hwang, Euichul</creatorcontrib><creatorcontrib>Lee, Sungmoon</creatorcontrib><creatorcontrib>Kim, Juyoun</creatorcontrib><creatorcontrib>Jung, Jooho</creatorcontrib><creatorcontrib>Yoo, Sangmin</creatorcontrib><creatorcontrib>Suh, Bongseok</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGBmZGlmaGTkbGxKgBAGLVIRI</recordid><startdate>20210713</startdate><enddate>20210713</enddate><creator>Na, Hyungjoo</creator><creator>Hwang, Euichul</creator><creator>Lee, Sungmoon</creator><creator>Kim, Juyoun</creator><creator>Jung, Jooho</creator><creator>Yoo, Sangmin</creator><creator>Suh, Bongseok</creator><scope>EVB</scope></search><sort><creationdate>20210713</creationdate><title>Semiconductor device</title><author>Na, Hyungjoo ; Hwang, Euichul ; Lee, Sungmoon ; Kim, Juyoun ; Jung, Jooho ; Yoo, Sangmin ; Suh, Bongseok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11062961B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Na, Hyungjoo</creatorcontrib><creatorcontrib>Hwang, Euichul</creatorcontrib><creatorcontrib>Lee, Sungmoon</creatorcontrib><creatorcontrib>Kim, Juyoun</creatorcontrib><creatorcontrib>Jung, Jooho</creatorcontrib><creatorcontrib>Yoo, Sangmin</creatorcontrib><creatorcontrib>Suh, Bongseok</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Na, Hyungjoo</au><au>Hwang, Euichul</au><au>Lee, Sungmoon</au><au>Kim, Juyoun</au><au>Jung, Jooho</au><au>Yoo, Sangmin</au><au>Suh, Bongseok</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2021-07-13</date><risdate>2021</risdate><abstract>A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11062961B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A19%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Na,%20Hyungjoo&rft.date=2021-07-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11062961B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true