Wafer processing method

Wafer processing method

There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral e...

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Hauptverfasser: Tabuchi, Tomotaka, Yamahata, Ichiro, Sandoh, Hideyuki
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tabuchi, Tomotaka
Yamahata, Ichiro
Sandoh, Hideyuki
description There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Wafer processing method
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