Semiconductor structure with enlarged gate electrode structure and method for forming the same

Semiconductor structure with enlarged gate electrode structure and method for forming the same

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below t...

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Hauptverfasser: Lo, Yi-Chun, Hsieh, Bo-Wen, Hsieh, Wen-Jia, Lin, Mi-Hua
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lo, Yi-Chun
Hsieh, Bo-Wen
Hsieh, Wen-Jia
Lin, Mi-Hua
description A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structure with enlarged gate electrode structure and method for forming the same
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