Forming dual metallization interconnect structures in single metallization level

Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a s...

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Bibliographische Detailangaben

Hauptverfasser:	Patlolla, Raghuveer R, Amanapu, Hari P, Surisetty, Charan V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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