Cut last self-aligned litho-etch patterning

The present disclosure relates to a method of performing a semiconductor fabrication process. The method may be performed by forming a spacer material over an underlying layer. The spacer material has sidewalls defining a first trench. A cut material is formed over the spacer material and within the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liang, Ming-Chung, Huang, Kuan-Wei, Lee, Chia-Ying
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!