Method for programming a memory system
A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the mem...
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| creator | Li, Haibo Mui, Man Lung |
| description | A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation. |
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When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzTS3JyE9RSMsvUigoyk8vSszNzcxLV0hUyE3NzS-qVCiuLC5JzeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGBsbmZiZGTkbGxKgBAHZyJ7s</recordid><startdate>20210615</startdate><enddate>20210615</enddate><creator>Li, Haibo</creator><creator>Mui, Man Lung</creator><scope>EVB</scope></search><sort><creationdate>20210615</creationdate><title>Method for programming a memory system</title><author>Li, Haibo ; Mui, Man Lung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11037642B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, Haibo</creatorcontrib><creatorcontrib>Mui, Man Lung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Haibo</au><au>Mui, Man Lung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for programming a memory system</title><date>2021-06-15</date><risdate>2021</risdate><abstract>A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method for programming a memory system |
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