Vertical fin field effect transistor with air gap spacers

A fin field effect transistor device with air gaps, including a source/drain layer on a substrate, one or more vertical fin(s) in contact with source/drain layer, a gate metal fill that forms a portion of a gate structure on each of the one or more vertical fin(s), and a bottom void space between th...

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Hauptverfasser:	Robison, Robert R, Vega, Reinaldo A, Mallela, Hari V, Venigalla, Rajasekhar
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Robison, Robert R Vega, Reinaldo A Mallela, Hari V Venigalla, Rajasekhar
description	A fin field effect transistor device with air gaps, including a source/drain layer on a substrate, one or more vertical fin(s) in contact with source/drain layer, a gate metal fill that forms a portion of a gate structure on each of the one or more vertical fin(s), and a bottom void space between the source/drain layer and the gate metal fill.
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title	Vertical fin field effect transistor with air gap spacers
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