Metallization in integrated circuit structures

Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	O'Brien, Daniel B, Baumgartel, Lukas M, Crum, Dax M, Golonzka, Oleg, Bergstrom, Daniel B, Wiegand, Christopher J, Lavric, Dan S, Leib, Jeffrey S, Duffy, Timothy Michael
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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