Metallization in integrated circuit structures
Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire a...
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| creator | O'Brien, Daniel B Baumgartel, Lukas M Crum, Dax M Golonzka, Oleg Bergstrom, Daniel B Wiegand, Christopher J Lavric, Dan S Leib, Jeffrey S Duffy, Timothy Michael |
| description | Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire and the second nanowire may be less than 5 nanometers, and the metal region may include tungsten between the first nanowire and the second nanowire. |
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For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Metallization in integrated circuit structures |
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