Device isolation design rules for HAST improvement

Device isolation design rules for HAST improvement

Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of...

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Hauptverfasser: Hanson, Allen W, Roberts, John Claassen, Struble, Wayne Mack
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hanson, Allen W
Roberts, John Claassen
Struble, Wayne Mack
description Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Device isolation design rules for HAST improvement
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