Deposition radial and edge profile tunability through independent control of TEOS flow
Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first g...
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| creator | Nguyen, Tuan Anh Baluja, Sanjeev Nunta, Nattaworn Boss Yang, Yi Aubuchon, Joseph F Janakiraman, Karthik Nguyen, Truong |
| description | Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening. |
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The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210525&DB=EPODOC&CC=US&NR=11017986B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210525&DB=EPODOC&CC=US&NR=11017986B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nguyen, Tuan Anh</creatorcontrib><creatorcontrib>Baluja, Sanjeev</creatorcontrib><creatorcontrib>Nunta, Nattaworn Boss</creatorcontrib><creatorcontrib>Yang, Yi</creatorcontrib><creatorcontrib>Aubuchon, Joseph F</creatorcontrib><creatorcontrib>Janakiraman, Karthik</creatorcontrib><creatorcontrib>Nguyen, Truong</creatorcontrib><title>Deposition radial and edge profile tunability through independent control of TEOS flow</title><description>Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTsKwkAQQNNYiHqH8QCCq-CnVSN2Fom2Yc3OJgPLzLI7Qby9KTyAzXvNgzctnheMkklJGJJ1ZANYdoCuQ4hJPAUEHdi-KJB-QPskQ9cDscOII1ihFdYkAcRDXd4r8EHe82Libci4-HlWLK9lfb6txluDOdoWGbV5VMaszf542J0223-aLyseObQ</recordid><startdate>20210525</startdate><enddate>20210525</enddate><creator>Nguyen, Tuan Anh</creator><creator>Baluja, Sanjeev</creator><creator>Nunta, Nattaworn Boss</creator><creator>Yang, Yi</creator><creator>Aubuchon, Joseph F</creator><creator>Janakiraman, Karthik</creator><creator>Nguyen, Truong</creator><scope>EVB</scope></search><sort><creationdate>20210525</creationdate><title>Deposition radial and edge profile tunability through independent control of TEOS flow</title><author>Nguyen, Tuan Anh ; Baluja, Sanjeev ; Nunta, Nattaworn Boss ; Yang, Yi ; Aubuchon, Joseph F ; Janakiraman, Karthik ; Nguyen, Truong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11017986B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, Tuan Anh</creatorcontrib><creatorcontrib>Baluja, Sanjeev</creatorcontrib><creatorcontrib>Nunta, Nattaworn Boss</creatorcontrib><creatorcontrib>Yang, Yi</creatorcontrib><creatorcontrib>Aubuchon, Joseph F</creatorcontrib><creatorcontrib>Janakiraman, Karthik</creatorcontrib><creatorcontrib>Nguyen, Truong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, Tuan Anh</au><au>Baluja, Sanjeev</au><au>Nunta, Nattaworn Boss</au><au>Yang, Yi</au><au>Aubuchon, Joseph F</au><au>Janakiraman, Karthik</au><au>Nguyen, Truong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Deposition radial and edge profile tunability through independent control of TEOS flow</title><date>2021-05-25</date><risdate>2021</risdate><abstract>Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Deposition radial and edge profile tunability through independent control of TEOS flow |
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