Gate cut device fabrication with extended height gates

Gate cut device fabrication with extended height gates

Methods of forming semiconductor devices include forming a lower dielectric layer, to a height below a height of a dummy gate hardmask disposed across multiple device regions, by forming a dielectric fill to the height of a dummy gate and etching the dielectric fill back. A dummy gate structure incl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Greene, Andrew M, Cheng, Kangguo, Sporre, John R, Xu, Peng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of forming semiconductor devices include forming a lower dielectric layer, to a height below a height of a dummy gate hardmask disposed across multiple device regions, by forming a dielectric fill to the height of a dummy gate and etching the dielectric fill back. A dummy gate structure includes the dummy gate and the dummy gate hardmask. A protective layer is formed on the dielectric layer to the height of the dummy gate hardmask. The dummy gate hardmask is etched back to expose the dummy gate.