Gate contact over active processes

A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a f...

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Bibliographische Detailangaben

Hauptverfasser:	Wang, Xikun, Thareja, Gaurav, Wang, Anchuan, Kashefizadeh, Keyvan, Wu, Dong, Natarajan, Sanjay, Seutter, Sean M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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