Reference generation for voltage sensing in a resistive memory

A sense amplifier circuit includes a reference path, a cell path, and a comparator circuit. The reference path includes a first current load device and a reference comparison node in which the reference path is coupled to a cell reference circuit during a read, wherein the first current load device...

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Bibliographische Detailangaben

Hauptverfasser:	Choy, Jon Scott, Ramanan, Karthik, Williams, Jacob
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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