Three-dimensional semiconductor memory devices and methods of fabricating the same

Integrated circuit devices and methods of forming the same are provided. The devices may include a substrate including a cell region and an extension region and conductive layers stacked on the cell region in a vertical direction. The conductive layers may extend onto the extension region and may ha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jang, Daehyun, Min, Jae Ho, Kim, Minhyuk, Son, Yong-Hoon, Ahn, Sung-Soo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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