Integrated circuit devices including a boron-containing insulating pattern
Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the s...
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creator | Yi, Wook-yeol Son, Yoon-ho Lee, Mong-sup Lee, Dong-kak |
description | Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact. |
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An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210323&DB=EPODOC&CC=US&NR=10957647B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210323&DB=EPODOC&CC=US&NR=10957647B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yi, Wook-yeol</creatorcontrib><creatorcontrib>Son, Yoon-ho</creatorcontrib><creatorcontrib>Lee, Mong-sup</creatorcontrib><creatorcontrib>Lee, Dong-kak</creatorcontrib><title>Integrated circuit devices including a boron-containing insulating pattern</title><description>Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNiksKAjEMQLtxIeod4gEG_A9uFUXdqushpnEIlLS0qeeXAQ_g6j0eb-xuVzXuMxp7IMlUxcDzR4gLiFKoXrQHhFfMURuKaig6JNFSA9qgCc0469SN3hgKz36cuPn59DheGk6x45KQWNm653252G_b3aY9rNb_PF93OjYB</recordid><startdate>20210323</startdate><enddate>20210323</enddate><creator>Yi, Wook-yeol</creator><creator>Son, Yoon-ho</creator><creator>Lee, Mong-sup</creator><creator>Lee, Dong-kak</creator><scope>EVB</scope></search><sort><creationdate>20210323</creationdate><title>Integrated circuit devices including a boron-containing insulating pattern</title><author>Yi, Wook-yeol ; Son, Yoon-ho ; Lee, Mong-sup ; Lee, Dong-kak</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10957647B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Yi, Wook-yeol</creatorcontrib><creatorcontrib>Son, Yoon-ho</creatorcontrib><creatorcontrib>Lee, Mong-sup</creatorcontrib><creatorcontrib>Lee, Dong-kak</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yi, Wook-yeol</au><au>Son, Yoon-ho</au><au>Lee, Mong-sup</au><au>Lee, Dong-kak</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated circuit devices including a boron-containing insulating pattern</title><date>2021-03-23</date><risdate>2021</risdate><abstract>Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Integrated circuit devices including a boron-containing insulating pattern |
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