Method of etching copper indium gallium selenide (CIGS) material

Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ling, Mang-Mang, Kim, Jong Mun, Ying, Chentsau
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Ling, Mang-Mang
Kim, Jong Mun
Ying, Chentsau
description Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10957548B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10957548B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10957548B23</originalsourceid><addsrcrecordid>eNrjZHDwTS3JyE9RyE9TSC1JzsjMS1dIzi8oSC1SyMxLySzNVUhPzMkB0cWpOal5mSmpChrOnu7Bmgq5iSWpRZmJOTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD402NDA0tTc1MTCyciYGDUAZbMwig</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of etching copper indium gallium selenide (CIGS) material</title><source>esp@cenet</source><creator>Ling, Mang-Mang ; Kim, Jong Mun ; Ying, Chentsau</creator><creatorcontrib>Ling, Mang-Mang ; Kim, Jong Mun ; Ying, Chentsau</creatorcontrib><description>Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; NON-METALLIC ELEMENTS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210323&amp;DB=EPODOC&amp;CC=US&amp;NR=10957548B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210323&amp;DB=EPODOC&amp;CC=US&amp;NR=10957548B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ling, Mang-Mang</creatorcontrib><creatorcontrib>Kim, Jong Mun</creatorcontrib><creatorcontrib>Ying, Chentsau</creatorcontrib><title>Method of etching copper indium gallium selenide (CIGS) material</title><description>Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDwTS3JyE9RyE9TSC1JzsjMS1dIzi8oSC1SyMxLySzNVUhPzMkB0cWpOal5mSmpChrOnu7Bmgq5iSWpRZmJOTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD402NDA0tTc1MTCyciYGDUAZbMwig</recordid><startdate>20210323</startdate><enddate>20210323</enddate><creator>Ling, Mang-Mang</creator><creator>Kim, Jong Mun</creator><creator>Ying, Chentsau</creator><scope>EVB</scope></search><sort><creationdate>20210323</creationdate><title>Method of etching copper indium gallium selenide (CIGS) material</title><author>Ling, Mang-Mang ; Kim, Jong Mun ; Ying, Chentsau</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10957548B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ling, Mang-Mang</creatorcontrib><creatorcontrib>Kim, Jong Mun</creatorcontrib><creatorcontrib>Ying, Chentsau</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ling, Mang-Mang</au><au>Kim, Jong Mun</au><au>Ying, Chentsau</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of etching copper indium gallium selenide (CIGS) material</title><date>2021-03-23</date><risdate>2021</risdate><abstract>Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10957548B2
source esp@cenet
subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-METALLIC ELEMENTS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
title Method of etching copper indium gallium selenide (CIGS) material
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T16%3A59%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ling,%20Mang-Mang&rft.date=2021-03-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10957548B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true