Semiconductor device including gate pattern having pad region

Semiconductor device including gate pattern having pad region

A semiconductor device includes a gate pattern disposed over a lower structure, and including a gate electrode region and a gate pad region extending from the gate electrode region; and a vertical channel semiconductor layer having a side surface facing the gate electrode region of the gate pattern....

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Hauptverfasser: Lee, Dong Ik, Nam, Bo Ra, Kim, Dai Hong, Im, Ji Woon, Jang, Se Mee
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lee, Dong Ik
Nam, Bo Ra
Kim, Dai Hong
Im, Ji Woon
Jang, Se Mee
description A semiconductor device includes a gate pattern disposed over a lower structure, and including a gate electrode region and a gate pad region extending from the gate electrode region; and a vertical channel semiconductor layer having a side surface facing the gate electrode region of the gate pattern. The gate pad region includes a first pad region having a thickness greater than a thickness of the gate electrode region. The first pad region includes an upper surface, a lower surface opposing the upper surface, and an outer side surface. The outer side surface has a lower outer side surface and an upper outer side surface, divided from each other by a boundary portion. The lower outer side surface extends from the lower surface, and a connection portion of the lower outer side surface and the lower surface has a rounded shape.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including gate pattern having pad region
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